Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-09-11
2007-09-11
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S095000, C257S094000, C257S103000, C257S013000, C257S079000, C257SE33006, C257SE33071
Reexamination Certificate
active
11230722
ABSTRACT:
A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
REFERENCES:
patent: 4218692 (1980-08-01), de Cremoux
patent: 4369458 (1983-01-01), Thomas et al.
patent: 4416054 (1983-11-01), Thomas et al.
patent: 4485391 (1984-11-01), Poulain et al.
patent: 4827290 (1989-05-01), Yoritomo et al.
patent: 5060027 (1991-10-01), Hart et al.
patent: 5087949 (1992-02-01), Haitz
patent: 5187547 (1993-02-01), Niina et al.
patent: 5218223 (1993-06-01), Spaeth et al.
patent: 5233204 (1993-08-01), Fletcher et al.
patent: 5260588 (1993-11-01), Ohta et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5387804 (1995-02-01), Suzuki et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5506451 (1996-04-01), Hyugaji
patent: 5517039 (1996-05-01), Holonyak, Jr. et al.
patent: 5621225 (1997-04-01), Shich et al.
patent: 5661316 (1997-08-01), Kish, Jr. et al.
patent: 5668386 (1997-09-01), Makiuchi et al.
patent: 5705834 (1998-01-01), Egalon et al.
patent: 5714014 (1998-02-01), Horikawa
patent: 5757829 (1998-05-01), Jiang et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5780321 (1998-07-01), Shich et al.
patent: 5783477 (1998-07-01), Kish, Jr. et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5917202 (1999-06-01), Haitz et al.
patent: 5923053 (1999-07-01), Jakowetz et al.
patent: 5923951 (1999-07-01), Goossen et al.
patent: 5940683 (1999-08-01), Holm et al.
patent: 6005262 (1999-12-01), Cunningham et al.
patent: 6015719 (2000-01-01), Kish, Jr. et al.
patent: 6066862 (2000-05-01), Chang et al.
patent: 6088378 (2000-07-01), Furukawa
patent: 6111272 (2000-08-01), Heinen
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6221683 (2001-04-01), Nirschl et al.
patent: 6222207 (2001-04-01), Carter-Coman et al.
patent: 6229160 (2001-05-01), Krames et al.
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6323063 (2001-11-01), Krames et al.
patent: 6417019 (2002-07-01), Mueller et al.
patent: 6458612 (2002-10-01), Chen et al.
patent: 6462358 (2002-10-01), Lin et al.
patent: 6486499 (2002-11-01), Krames et al.
patent: 6492661 (2002-12-01), Chien et al.
patent: 6547249 (2003-04-01), Collins, III et al.
patent: 6570190 (2003-05-01), Krames et al.
patent: 24 16 098 (1975-10-01), None
patent: 196 29 920 (1997-02-01), None
patent: 0 001 728 (1978-09-01), None
patent: 0 051 505 (1981-10-01), None
patent: 0 350 242 (1990-01-01), None
patent: 0 415 541 (1994-10-01), None
patent: 0 779 666 (1997-06-01), None
patent: 0 551 001 (1999-09-01), None
patent: 2 649 537 (1991-01-01), None
patent: 2 072 946 (1981-10-01), None
patent: 63-152179 (1988-06-01), None
patent: 03-035568 (1991-02-01), None
patent: 9199759 (1997-07-01), None
patent: 2 964 822 (1999-10-01), None
G-SiC® Technology—Ultra Bright LEDs—CXXX UB290-E1000, CREE product paper, 1 page.
Richard Dixon, “Cree and AXT make brighter LEDs,” Compound Semiconductor, Dec. 2001, LED News, p. 9.
“UEC unvails new wafer-bonded AllnGaP LED structure,” CS-Max Conference Report, Compound Semiconductor, Sep. 2001, p. 51.
R.H. Horng et al., “Wafer Bonding of 50-mm Diameter Mirror Substrates to AlGaInP Light-Emitting Diode Wafers,” Journal of Electronic Materials, vol. 30, No. 8, 2001, pp. 907-910.
Co-pending application entitled: “Multi-Layer Highly Reflective Ohmic Contacts for Semiconductor Devices,” U.S. Appl. No. 09/469,652, filed Dec. 22, 1999, 19 pages including drawings.
Co-pending application entitled: “Light Emitting Diodes with Improved Light Extraction Efficiency,” U.S. Appl. No. 09/660,317, filed Sep. 12, 2000, 37 pages including drawings.
Translation from Japanese Application No. 61-300765 entitled “Semiconductor Light-Emitting Element”.
English Language Abstract to FR 2 649 537 A1, 1 page.
Patent Abstracts of Japan, Patent No. 63-152179(a), 1 page.
English Language translation of DE 24 16 098 A1, 9 pages.
W.N. Carr, “Photometric Figures Of Merit For Semiconductor Luminescent Sources Operating In Spontaneous Mode,” Infrared Physics, 1996, vol. 6, pp. 1-19.
Zh. I. Alferov et al., “Efficient Al-Ga-As Heterojunction Light-Emitting Diode”, Sov. Phys. Tech. Phys. 23(4), Apr. 1978, pp. 476-480.
A.R. Franklin and R. Newman, “Shaped Electroluminescent GaAs Diodes”, Journal of Applied Physics, vol. 35, No. 4, Apr. 1964, pp. 1153-1155.
J. A. Dobrowski, “Coatings and Filters”, Division of Physics, National Research Council of Canada, Ottawa, Ontario, Section 8, pp. 8-1 thru 8-124, 1972.
G. E. Hofler et al., “Wafer Bonding of 50-mm Diameter GaP to AlGaInP-GaP Light-Emitting Diode Wafers,” Appl. Phys. Lett. 69(6), Aug. 5, 1996, pp. 803-805.
Kish, Jr. Fred A
Krames Michael R
Tan Tun S
Nguyen Joseph
Ogonowsky Brian D.
Parker Kenneth
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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