Light exposure method for the fabrication of semiconductor devic

Details Light exposure method for the fabrication of semiconductor devic Light exposure method for the fabrication of semiconductor devic

1996-08-09

1997-12-16

Rosasci, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 359564, G03F 900

Patent

active

056983506

ABSTRACT:
A light exposure method for fabrication of a semiconductor device and a dummy mask used therefor, capable of forming an ultra-fine pattern by diffracting incident light while controlling or cutting off light components vertically incident on a mask formed with a pattern, thereby increasing the depth of focus and improving the resolution. The dummy mask includes a transparent substrate provided at its upper surface with a diffracting pattern for primarily diffracting light from a light source incident on the dummy mask and at its lower surface with a blocking pattern for removing vertically incident light not diffracted by the diffraction patterns.

REFERENCES:
patent: 4223083 (1980-09-01), Engstrom
patent: 4947413 (1990-08-01), Jewell et al.
patent: 5208629 (1993-05-01), Matsuo et al.
patent: 5387484 (1995-02-01), Doany et al.

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