Light exposure mask for semiconductor devices

Details Light exposure mask for semiconductor devices Light exposure mask for semiconductor devices

1995-12-08

1997-07-22

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430312, G03F 900

Patent

active

056502508

ABSTRACT:
A light exposure mask for a semiconductor device having different line/space pattern widths at different mask portions in such a manner that its repeated patterns disposed at the central mask portion corresponding to the memory region of the semiconductor device have a minimum line/space width whereas those disposed at the peripheral mask portion have a line/space width larger than the minimum width, such that its non-uniform patterns disposed at the peripheral mask portion have a space width larger than the minimum width, and such that its independent pattern has a line width larger than the minimum width. With such line/space pattern widths, the light exposure mask is capable of preventing a short circuit caused by the residue of a photoresist film material after a light exposure according to the modified illumination method or caused by an excessive light exposure, forming a precise micro pattern, increasing the process redundancy, and thereby achieving an improvement in process yield and operation reliance.

REFERENCES:
patent: 5364718 (1994-11-01), Oae et al.
patent: 5439765 (1995-08-01), Nozue

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