Light emitting transistor

Details Light emitting transistor Light emitting transistor

2005-03-30

2009-12-15

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S084000, C257S098000, C257SE51042

Reexamination Certificate

active

07633084

ABSTRACT:
A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor11of a vertical FET structure comprising: on a substrate12; a source electrode13; a hole transporting layer14in which a slit-shaped gate electrode15is embedded; an equipotential layer16; light emitting layer17; and a transparent or semitransparent drain electrode18, provided in this order. In this light emitting transistor, the drain electrode18provided on the opposite side of the gate electrode15, viewing from the light emitting layer17, is transparent or semitransparent. Therefore, light generated in the light emitting layer17can be taken out from the drain electrode side. An electron transporting layer19can be provided between the light emitting layer17and the drain electrode18.

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“Recent Progress and Future Trend of Organic Transistors”; Kudoh K; Japan Soc. Appl. Phys.; vol. 72; Nr 9; pp. 1151-1156; 2003; ISSN 0369-8009.
Frabrication and device characterization of organic light emitting transistors; Thin Solid Films; vol. 438-439; pp. 330-333; 2003; Kudo, K; Tanaka, S; Iszuka, M; Nakamura, M; ISSN 0040-6090.

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