Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-10-16
2007-10-16
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000, C257S350000, C257S351000, C257SE33065
Reexamination Certificate
active
10731033
ABSTRACT:
(Object) In a light-emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier.(Solving Means)The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.
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International Search Report Dated Feb. 3, 2004 for PCT/JP03/15173.
International Preliminary Examination Dated Mar. 23, 2004, of PCT/JP03/15173.
Miyagi Noriko
Murakami Satoshi
Brewster William M.
Costellia Jeffrey
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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