Light emitting semiconductor having a rear reflecting surface

Details Light emitting semiconductor having a rear reflecting surface Light emitting semiconductor having a rear reflecting surface

1990-03-23

1991-02-05

James, Andrew J.

357 60, 357 19, H01L 3300

Patent

active

049909703

ABSTRACT:
A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.

REFERENCES:
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P. A. Badoz et al., "Permeable Base Transistor Fabrication by Selective Epitaxial Growth of Silicon on a Submicrometer WSi.sub.2 Grid", Appl. Phys. Lett. 56(23), 4 Jun. 1990, pp. 2307-2309.
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