Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-05-15
1998-09-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257102, 257103, 372 43, 372 44, 372 45, H01L 3300
Patent
active
058148388
ABSTRACT:
An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer of either n type AlGaInP or n type AlInP semiconductor material on one side of the active layer, and a p type cladding layer of p type AlGaInP or p type AlInP semiconductor material on another side of the active layer. Unlike the conventional belief that the active layer should be as free as possible from the infiltration of Zn used in the p type cladding layer as an impurity to determine its p conductivity type, and hence as high in crystallinity as possible, Zn is positively doped into the active layer with a concentration of 1.times.10.sup.16 -5.times.10.sup.17 cm.sup.-3.
REFERENCES:
patent: 5411915 (1995-05-01), Hamada et al.
patent: 5617438 (1997-04-01), Hatano et al.
patent: 5631475 (1997-05-01), Watabe et al.
patent: 5661741 (1997-08-01), Kakimoto
patent: 5677922 (1997-10-01), Hayafusi et al.
Chino Emiko
Moku Tetsuji
Murofushi Hitoshi
Ohtsuka Koji
Mintel William
Sanken Electric Co. Ltd.
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