Light emitting semiconductor devices

Details Light emitting semiconductor devices Light emitting semiconductor devices

1979-06-21

1982-01-26

Davie, James W.

Oscillators

Relaxation oscillators

331 945H, 357 16, H01S 318, H01S 319

Patent

active

043131255

ABSTRACT:
A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure.

REFERENCES:
patent: 4184170 (1980-01-01), Burnham et al.
D. V. Lang et al., "Capacitance Spectroscopy Studies of Degraded Al.sub.x Ga.sub.1-x As DH Stripe-Geometry Lasers", J. of Applied Physics, vol. 47, No. 11, Nov. 1976, pp. 4986 and 4987.
T. Kobayashi, "Recombination-Enhanced Annealing Effect of AlGaAs-GaAs Remote Junction Heterostructure Lasers", IEEE Quantum Electronics Conference, Sep. 1978.
K. Kobayashi et al., "Unstable Horizontal Transverse Modes and Their Stabilization with a New Stripe Structure", IEE J. of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 659-661.
R. Nelson et al., "Minority-Carrier Lifetime and Internal Quantum Efficiency of Surface-free GaAs", J. of Applied Physics, vol. 49, No. 12, Dec. 1978, pp. 6103-6108.

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