Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1991-10-24
1994-01-25
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257 91, 257 94, 257 99, 257103, 257621, 257622, H01L 3300
Patent
active
052818306
ABSTRACT:
There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, where 0.ltoreq.x<1) comprises an n-layer; a p-layer which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, the p-layer joining to the n-layer; a first electrode for the n-layer so as to join to the n-layer, passing through a hole formed in the p-layer which extends from the p-layer to the n-layer; and a second electrode for the p-layer which is formed in a region which is separated by a groove formed in the p-layer so as to extend from the upper surface of the p-layer to said n-layer. An LED comprises an n-layer; an i-layer doped with p-type impurities, the i-layer joining to the n-layer; a first electrode for said n-layer so as to join to the n-layer, passing through a hole formed in the i-layer which extends from the upper surface of the i-layer to the n-layer; a p-type part in a specific region in the i-layer which is converted into p-type conduction by irradiating with electron rays, the p-type part being formed such that said first electrode is insulated and separated by the i-layer; and a second electrode for said p-type part.
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Akasaki Isamu
Amano Hiroshi
Kotaki Masahiro
Nagoya University
Research Development Corporation of Japan
Toyoda Gosei Co,., Ltd.
Wojciechowicz Edward
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