Light-emitting semiconductor device using gallium nitride compou

Details Light-emitting semiconductor device using gallium nitride compou Light-emitting semiconductor device using gallium nitride compou

1997-05-27

1999-01-19

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 96, 257 98, H01S 319

Patent

active

058621679

ABSTRACT:
A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.

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patent: 5493577 (1996-02-01), Choquette et al.
Hecht, Understanding Lasers An Entry-Level Guide, IEEE Press, p. 262, 1994.

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