Light-emitting semiconductor device protected against...

Details Light-emitting semiconductor device protected against... Light-emitting semiconductor device protected against...

2007-06-18

2010-02-09

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S079000, C257S431000, C257SE51022, C257SE25032

Reexamination Certificate

active

07659553

ABSTRACT:
An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.

REFERENCES:
patent: 6555405 (2003-04-01), Chen et al.
patent: 2001/0042866 (2001-11-01), Coman et al.
patent: 2004/0033638 (2004-02-01), Bader et al.
patent: 2005/0161682 (2005-07-01), Mazzochette et al.
patent: 2006/0231852 (2006-10-01), Kususe et al.
patent: 2006/0284195 (2006-12-01), Nagai
patent: 2002-217450 (2002-08-01), None

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