Light emitting semiconductor device matrix with non-single-cryst

Details Light emitting semiconductor device matrix with non-single-cryst Light emitting semiconductor device matrix with non-single-cryst

1987-05-29

1989-09-19

James, Andrew J.

357 2, 357 58, 357 63, 357 45, H01L 3300

Patent

active

048686140

ABSTRACT:
A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the second semiconductor layer, or a first non-single-crystal semiconductor layer, many second non-single-crystal semiconductor layers formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the first semiconductor layer to cover the second semiconductor layers. The first and second semiconductor layers have either one or the other of p and n conductivity types, respectively. Semiconductors of the first, second and third layers are each doped with a dangling bond and recombination center neutralizer. The semiconductor of the second layer has a smaller energy gap than the semiconductors of the first and third layers.

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