Light emitting semiconductor device having multilayer structure

Details Light emitting semiconductor device having multilayer structure Light emitting semiconductor device having multilayer structure

1992-02-18

1994-03-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 94, 257103, 257183, 372 45, 372 46, H01L 29161, H01L 29205

Patent

active

052967182

ABSTRACT:
ZnSSE mixed crystal semiconductors and ZnCdSe mixed crystal semiconductors are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound to form a light emitting semiconductor device of a multilayer structure so that electrons and holes are efficiently confined therein. This increases the carrier recombination probability and emission efficiency. A device may be arranged where mixed crystal semiconductors of two types respectively having different component compositions of Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 and Zn.sub.1-x2 Cd.sub.x2 S.sub.y2 Se .sub.1-y2 are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound such that the ratio of components of the mixed crystal semiconductors of two types satisfies the relationship that x.sub.1 is smaller than x.sub.2 and y.sub.1 is greater than y.sub.2. Alternately, a device may be arranged where a Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layer is formed on a single crystal substrate composed of a III-V or II-VI compound, a Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 layer is formed on the Zn.sub. 1-x Cd.sub.x S.sub.y Se.sub.1-y layer, and a ZnS.sub.y2 Se.sub.1-y2 layer is formed on the Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1, such that each of the Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y and the ZnS.sub.y2 Se.sub.1-y2 has a lattice constant substantially equal to that of the substrate and the Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 has a lattice constant different from that of the substrate.

REFERENCES:
patent: 4794606 (1988-12-01), Kondow et al.
patent: 5045894 (1991-09-01), Migita et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5081632 (1992-01-01), Migita et al.
"Nearly Room-Temperature Photopumped Blue Lasers in ZnS.sub.x Se.sub.1-x /ZnSe Multilayer Structures", Koichiro Nakanishi et al., Extended Abstract of Conference on Solid State Devices and Materials, (1990), pp. 621-624.
"Room-Temperature Blue Lasing Action in (Zn,Cd)Se/ZnSe Optically Pumped Multiple Quantum Well Structures on Lattice-Matched (Ga,In) As Substrates", Applied Physics Letters, (1990), vol. 57, No. 23, pp. 2413-2415.

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