Light-emitting semiconductor device having enhanced brightness

Details Light-emitting semiconductor device having enhanced brightness Light-emitting semiconductor device having enhanced brightness

2005-10-25

2005-10-25

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S086000, C257S099000

Reexamination Certificate

active

06958496

ABSTRACT:
This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5488235 (1996-01-01), Nozaki et al.
patent: 2004/0065891 (2004-04-01), Shakuda et al.
patent: 2004/0169184 (2004-09-01), Udagawa et al.

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