Light-emitting semiconductor device having an overvoltage...

Details Light-emitting semiconductor device having an overvoltage... Light-emitting semiconductor device having an overvoltage...

2008-07-29

2008-07-29

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257S099000, C257S103000

Reexamination Certificate

active

11225837

ABSTRACT:
An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.

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patent: 2005/0271107 (2005-12-01), Murakami et al.
patent: 11-214747 (1999-08-01), None

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