Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-02-13
2007-02-13
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257SE33004, C438S022000
Reexamination Certificate
active
11122620
ABSTRACT:
A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.
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Moku Tetsuji
Ohtsuka Koji
Sato Junji
Tajima Mikio
Tanaka Yoshitaka
Huynh Andy
Nguyen Thinh T
Sanken Electric Co. Ltd.
Woodcock & Washburn LLP
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