Light-emitting semiconductor device and method of fabrication

Details Light-emitting semiconductor device and method of fabrication Light-emitting semiconductor device and method of fabrication

2006-08-08

2006-08-08

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S098000, C257S103000

Reexamination Certificate

active

07087933

ABSTRACT:
A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.

REFERENCES:
patent: 6869820 (2005-03-01), Chen
patent: 2003/0003613 (2003-01-01), Hsieh et al.
patent: 2002-217450 (2002-08-01), None

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