Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1997-01-17
1998-08-25
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 98, H01L 3300
Patent
active
057985367
ABSTRACT:
Desclosed is a light-emitting semiconductor device has a light-emitting chip. The light-emitting chip has an insulator substrate and a semiconductor layer formed overlying the substrate. First and second conductivity type regions are formed in the semiconductor layer. The second conductivity type region has an exposed surface formed by removing part of the semiconductor layer. A top electrode is formed on a surface of the first conductivity type region. An end electrode is formed on an exposed surface of the second conductivity type region. A first electrode lead is mounted with the light-emitting chip and has a projecting portion extending along an adjacent surface of the light-emitting chip. A second electrode lead extends parallel to the first electrode lead. A conductor wire is electrically connected between the second electrode lead and the top electrode. The end electrode and the projecting portion are electrically connected through an electrically-conductive resin.
REFERENCES:
patent: 3964157 (1976-06-01), Kuhn et al.
patent: 5293066 (1994-03-01), Tsumura
Meier Stephen
Rohm & Co., Ltd.
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