light emitting semiconductor device and its manufacturing method

Details light emitting semiconductor device and its manufacturing method light emitting semiconductor device and its manufacturing method

1996-06-21

1998-09-29

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 257 94, 257 96, H01L 3300, H01S 319, H01S 318

Patent

active

058155201

ABSTRACT:
The present invention discloses a highly bright short wavelength light emitting semiconductor device with high reliance having improved crystallinity and surface smoothness. The device comprises at least one layer of In.sub.x Ga.sub.y Al.sub.1-x-y N (where, 0.ltoreq.x.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) formed on a sapphire substrate or a Si substrate, wherein a ZnO buffer layer (2) which can lattice match In.sub.x Ga.sub.y Al.sub.1-x-y N is formed on the substrate (1) and a manufacturing method thereof.

REFERENCES:
patent: 5602418 (1997-02-01), Imai et al.
patent: 5604763 (1997-02-01), Kato et al.

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