Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-11-06
2007-11-06
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000, C257S102000
Reexamination Certificate
active
10564416
ABSTRACT:
In layer structure20of a semiconductor laser of a surface emitting type,21and24represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer22made of n-type InGaN and a DBR layer25made of dielectric are formed on and below a InGaN active layer23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.
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Ando Masanobu
Nakai Masahito
Nakayama Masaaki
Uemura Toshiya
Crane Sara
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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