Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

1985-12-18

1987-10-20

Edlow, Martin H.

357 58, 357 16, 357 4, H01L 3300

Patent

active

047017740

ABSTRACT:
In a carrier injection type light emitting semiconductor device with a QW structure, a p-type impurity doped layer and/or an n-type impurity doped layer are inserted into an optical wave guide layer so as to cancel an internal electric field in an active region.

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Fujii et al, "MBE Growth of Extremely High-Quality GaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer", J. Vac. Sci. Technol. B3(2) Mar./Apr. 1985, pp. 776-778.
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R. C. Miller et al; "Some Effects of a Longitudinal Electric Field on the Photoluminescence of P-Doped GaAs-AlxGal-xAs . . . ".

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