Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

1995-03-13

1997-12-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257773, 372 44, 372 50, H01L 2941, H01L 2715, H01S 319

Patent

active

056963890

ABSTRACT:
A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

REFERENCES:
patent: 3290539 (1966-12-01), La Morte
patent: 3368123 (1968-02-01), Rittman
patent: 3675064 (1972-07-01), Coleman
patent: 4214251 (1980-07-01), Schairer
patent: 5283447 (1994-02-01), Olbright
Japanese Journal of Applied Physics, vol. 30, No. 12A, S. Nakamura, et al., High-Power GaN P-N Junction Blue-Light -Emitting Diodes, pp. L1999-L2001.

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