Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

1988-01-19

1989-07-04

Sikes, William L.

Coherent light generators

Particular component circuitry

Optical pumping

372 45, 372 46, 357 16, H01S 319, H01L 3300

Patent

active

048455350

ABSTRACT:
The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emittter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.

REFERENCES:
patent: 4475200 (1984-10-01), Lee
patent: 4503540 (1985-03-01), Nakashima et al.
Henry Kressel and J. K. Butler, an article from "Semiconductor Lasers and Heterojunction LEDs", entitled: Relation Between Electrical and Optical Properties of Laser Diodes, Chapter 8, published by Academic Press, New York, San Francisco, London, 1977, pp. 249-261.
Henry Kressel and J. K. Butler, an article from "Semiconductor Lasers and Heterojunction LEDs", entitled: Transient Effects in Laser Diodes, Chapter 17, published by Academic Press, New York, San Francisco, London, 1977, pp. 555-579.
L. A. Glasser, E. P. Ippen, and H. A. Haus, "Picosecond Pulse Generation with a cw GaAIAs Laser Diode", Appl. Phys. Lett. 33(3), Aug. 1, 1978, pp. 241-242.

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