Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

1982-03-24

1987-06-23

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 60, 372 46, 372 48, H01S 318

Patent

active

046757104

ABSTRACT:
An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet.

REFERENCES:
Sov. Phys. Tech. Phys. 22, "Al-Ga-As Heterostructure with Confined Current Flow", by Alferov et al., Aug. 1977, pp. 1032-1036.
Electronics Letters, "High Temperature CW Operation of 1.5 .mu.m InGaAsP/InP Buffer-Layer Loaded Planoconvex Waveguide Lasers", Noda et al., vol. 17, No. 6, Mar. 19, 1981, pp. 226-227.
RCA Review, "Chemical Etching of Silicon, Germanium, Gallium, Arsenide, and Gallium Phosphide", Kern, vol. 39, No. 2, Jun. 1978, pp. 278-308.
Electronics Letters, "Low Threshold Channelled-Substrate Buried Crescent InGaAsP Lasers Emitting at 1.54 .mu.m", Devlin et al., vol. 17, No. 18, Sep. 3, 1981, pp. 651-653.
Electronics Letters, "V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser", Ishikawa et al., vol. 17, No. 13, Jun. 25, 1981, pp. 465-467.

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