Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

2004-11-22

2008-11-25

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S094000

Reexamination Certificate

active

07456435

ABSTRACT:
A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6369403 (2002-04-01), Holonyak, Jr.
patent: 6479836 (2002-11-01), Suzuki et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6995403 (2006-02-01), Tu et al.
patent: 7009215 (2006-03-01), D'Evelyn et al.
patent: 2002/0104997 (2002-08-01), Kuo et al.
patent: 2003/0006418 (2003-01-01), Emerson et al.
patent: 2003/0178631 (2003-09-01), Udagawa
patent: 2004/0084684 (2004-05-01), Tarsa et al.
patent: 2004/0206962 (2004-10-01), Erchak et al.
patent: 2003/197965 (2003-07-01), None
Takeuchi et al. GaN-based Tunnel Junction in Optical Devices. Physics and Simulation of Optoelectronic Deices X, Proceeding of SPIE vol. 4646 (2002).

Affiliated with

Also associated with

Rating

Light-emitting semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4043209