Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

1983-08-12

1986-12-16

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 372 45, 372 47, H01L 3300, H01S 319

Patent

active

046300830

ABSTRACT:
A transverse junction strip structure light-emitting semiconductor device (laser) includes a laminated active layer of a multiquantum well structure. A P-type region of the semiconductor device is formed by doping P-type impurities into portions of the active layer and the clad layers between which the active layer is sandwiched. The P-type region includes a mixture region which is formed by diffusing P-type impurities into first semiconductor ultrathin layers serving as wells and second semiconductor ultrathin layers serving as barriers. The mixture region has a larger band gap than the first semiconductor ultrathin layers and forms a heterojunction with the first semiconductor ultrathin layers.

REFERENCES:
patent: 4352116 (1982-09-01), Yariv et al.
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4438446 (1984-03-01), Tsang
patent: 4503540 (1985-03-01), Nakashima et al.
Lee et al., "Low Threshold Current Transverse-Junction Laser on Semi-Insulating Substrates by MBE", Jan. 1980, pp. 26-30, Conference: Integrated and Guided-Wave Optics Technical Digest.

Affiliated with

Also associated with

Rating

Light-emitting semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-247927