Light-emitting semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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Details

C257S099000, C257S081000, C257S078000, C257SE33062, C257SE33072, C438S022000, C438S025000, C438S026000, C438S027000, C438S029000

Reexamination Certificate

active

11236882

ABSTRACT:
A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film10made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film20,a reflection film30which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer40made of gold (Au) are deposited in sequence. Because the insulation protection film20exists between the transparent conductive film10and the reflection film30,metal atoms comprised in the reflection film30can be prevented from diffusing in the transparent conductive film10.That enables the transparent conductive film10to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

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patent: 2003-224297 (2003-08-01), None
patent: 2004-71655 (2004-03-01), None

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