Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

2007-04-03

2007-04-03

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257S103000, C257S090000, C257S098000, C257S094000, C257S613000, C257SE33064

Reexamination Certificate

active

11058942

ABSTRACT:
An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.

REFERENCES:
patent: 6233266 (2001-05-01), Kawasumi
patent: 2005/0067613 (2005-03-01), Kim
patent: 11-004020 (1999-01-01), None
patent: 2002-217450 (2002-08-01), None
patent: 2003-224297 (2003-08-01), None

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