Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

2007-09-04

2007-09-04

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S082000, C257S257000, C257S290000, C257SE33001, C257SE33076, C257SE31099, C257SE31105, C977S759000, C977S760000, C977S761000, C977S773000

Reexamination Certificate

active

11150370

ABSTRACT:
A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.

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patent: 2006/0001056 (2006-01-01), Saxler
patent: 2006/0260674 (2006-11-01), Tran

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