Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

2011-07-26

2011-07-26

Maldonado, Julio J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S013000, C257S014000, C257S030000, C257SE33008, C257SE33011

Reexamination Certificate

active

07985964

ABSTRACT:
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

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