Light-emitting semiconductor device

Details Light-emitting semiconductor device Light-emitting semiconductor device

1988-08-01

1990-02-27

Wojciechowicz, Edward J.

357 58, 357 60, 357 61, 357 90, H01L 3300

Patent

active

049050583

ABSTRACT:
In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer of mixed crystal Ga.sub.1-z Al.sub.z AS, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.

REFERENCES:
patent: 4745612 (1988-05-01), Hayakawa et al.

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