Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

1989-11-07

1991-02-12

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 61, 357 30, 372 43, 372 44, 372 45, H01L 3300

Patent

active

049928376

ABSTRACT:
A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystals of GaAsP. The active layer is made of at least one of II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor. The clad layer is made of II-transition metal-VI group compound semiconductor, which is lattice-matched to the active layer.

REFERENCES:
patent: 4573161 (1986-02-01), Sakai et al.
Harris et al., "Growth and Properties . . . Hg.sub.1-x Mn.sub.x Te", Appl. Phys. Lett., 49(12), 9/22/86.
Gunshor et al., "Diluted Magnetic Semiconductor Superlattices", Journal of Crystal Growth, 72, 1985.

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