Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2011-08-23
2011-08-23
Pert, Evan (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000, C257SE33067, C438S024000, C438S029000
Reexamination Certificate
active
08003996
ABSTRACT:
The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely. The semiconductor component according to the invention has a substrate (8), a first charge carrier barrier layer (7) arranged on the substrate (8), a photoluminescent layer (6) arranged on the first charge carrier barrier layer (7), a second charge carrier barrier layer (5) arranged on the photoluminescent layer (6), and an active electroluminescent layer (4) composed of at least one inorganic semiconductor and arranged on the second charge carrier barrier layer (5), wherein the photoluminescent layer (6) absorbs at least part of the light emitted by the electroluminescent layer (4), and an at least partly transparent contact layer (1) arranged on the active electroluminescent layer (4) is furthermore provided.
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Weyers Markus
Zorn Martin
Forschungsverbund Berlin E.V.
Muñoz Andrés
Perkins Coie LLP
Pert Evan
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