Light-emitting semiconductor component

Details Light-emitting semiconductor component Light-emitting semiconductor component

2005-08-30

2005-08-30

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S080000, C257S081000

Reexamination Certificate

active

06936853

ABSTRACT:
In a light-emitting semiconductor component having a thin-film stack (30) having an active layer (34) and front- and rear-side contact regions (40, 42), which are formed on a front side (60) and a rear side (62) of the thin-film stack (30) and serve for impressing current into the active layer (34), the thin-film stack (30) has a light generation region (50), in which photons are generated by recombination of charge carriers, and has a light coupling-out region (54), in which light is coupled out from the component. The light generation region (50) and the light coupling-out region (54) are at least partly separated from one another in the plane of the thin-film stack (30).

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I. Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”, Appl. Phys. Lett. 63 (16), pp. 2174-2176, Oct. 1993.

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