Light emitting semiconductor component

Details Light emitting semiconductor component Light emitting semiconductor component

1978-03-30

1979-10-02

Edlow, Martin H.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

313498, 313499, 313499, H01L 3300

Patent

active

041700180

ABSTRACT:
A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second conductivity type. A layer of Zn.sub.2 SiO.sub.4 doped with a luminous phosphor lies on the planar substrate surface within this window without contact with the walls of the window opening. Three metal electrodes are formed, one on the portion of the Zn.sub.2 SiO.sub.4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone.
The Zn.sub.2 O.sub.4 layer is preferably doped with Mn ions in a concentration of between 5.multidot.10.sup.16 and 5.multidot.10.sup.19 cm.sup.-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5.multidot.10.sup.18 and 5.multidot.10.sup.19 ions cm.sup.-3. A process for the production of the component is disclosed, and a process for the operation of the component is disclosed.

REFERENCES:
patent: 4062035 (1977-12-01), Winstel
Hurd et al., J. Vac. Sci. Technol., vol. 13, No. 1, Jan./Feb. 1976, pp. 410-413.

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