Light emitting semiconductor bonding structure and method of...

Details Light emitting semiconductor bonding structure and method of... Light emitting semiconductor bonding structure and method of...

2008-05-20

2008-05-20

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S612000, C438S618000, C257S099000, C257S081000, C257S079000, C257SE33001, C257SE33002

Reexamination Certificate

active

07374958

ABSTRACT:
A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.

REFERENCES:
patent: 6900474 (2005-05-01), Misra et al.
patent: 2002/0123164 (2002-09-01), Slater et al.

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