Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-04-26
2005-04-26
Robertson, Jeffrey B. (Department: 1712)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S040000, C257S079000, C257S094000, C257S096000, C252S301350, C427S066000, C427S387000, C427S421100, C428S447000, C428S448000, C528S012000, C528S020000, C528S036000, C528S043000
Reexamination Certificate
active
06885038
ABSTRACT:
Disclosed are compounds according to formula (I),wherein R′ and R″ are selected from the group consisting of R′=SiR1R2R3and R″=H; R′=SiR1R2R3and R″=SiR4R5R6; and R′=Ar1SiR1R2R3and R″=Ar2SiR4R5R6; R1, R2, R3, R4, R5, and R6are independently selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, aryl, cycloalkyl, cycloalkenyl, cycloalkynyl, arylalkyl, arylalkenyl, and arylalkynyl; Ar1and Ar2are independently selected from the group consisting of arylene, arylenealkylene, arylenealkynylene, heteroarylene, heteroarylenealkylene, heteroarylenealkenylene and heteroarylenealkylene; and n is at least 20. Such compounds may be used as an emissive layer in a polymer light-emitting diode (PLED), which itself may be used in electroluminescent devices.
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Chen Zhikuan
Chua Soo Jin
Huang Wei
Agency for Science Technology and Research
National University of Singapore
Robertson Jeffrey B.
TraskBritt
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