Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-06-21
2011-06-21
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S040000, C257S094000, C257SE31064
Reexamination Certificate
active
07964878
ABSTRACT:
A light emitting device comprising a transparent substrate; a layer of conducting material in contact with the transparent substrate; a self-assembled monolayer bonded to the layer of conducting material; one or more light emitting polymer layers in electron contact to the self-assembled monolayer; and a reflective metal layer in electron contact with the light emitting polymer layer is provided. The light emitting device provided gives enhanced performance as compared to currently available devices. Also provided is a self-assembled monolayer having the formula: R2—R3—Y where Y is a group capable of electron contact with a light emitting polymer, R3contains a conjugated group, and R2is a group capable of bonding to a conducting material.
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Colaneri Nicolas Frederick
Gil Jun Mo
Gough Neil
Huffman William A.
Walker Wesley Thomas
Arnold & Knobloch, L.L.P.
HCF Partners, LP
Soward Ida M
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