Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-07-17
2007-07-17
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257S462000, C257S439000, C257S465000, C257S466000, C136S244000
Reexamination Certificate
active
10485845
ABSTRACT:
The present invention is a semiconductor module (20) in which, for example, twenty-five semiconductor devices (10) with a pnotoelectric conversion function are arranged in the form of a five row by five column matrix via an electrically conductive mechanism including of six connecting leads (21to26). The semiconductor devices (10) in each column are connected in series, and the semiconductor devices (10) in each row are connected in parallel. Positive and negative terminals, which are embedded in a light transmitting member (28) made of a transparent synthetic resin and which protrude to the outside, are also provided. The semiconductor device (10) comprises a diffusion layer, a pn junction, and one flat surface on the surface of a spherical p-type semiconductor crystal, for example. A positive electrode6aformed on the flat surface and connected to the p-type semiconductor crystal, and a negative electrode6bthat lies opposite the positive electrode6awith the center of the p-type semiconductor crystal interposed therebetween, are provided.
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U.S. Appl. No. 10/169,017, filed Oct. 7, 2002, Nakata.
Crane Sara
Gebremariam Samuel A.
Jordan and Hamburg LLP
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