Light emitting nitride semiconductor device and method of...

Details Light emitting nitride semiconductor device and method of... Light emitting nitride semiconductor device and method of...

2008-04-01

2008-04-01

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257S100000

Reexamination Certificate

active

07352009

ABSTRACT:
There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the semiconductor layer of the first conductivity, a semiconductor layer of a second conductivity overlying the light emitting layer, and a second electrode overlying at least the semiconductor layer of the second conductivity, wherein the second electrode has a high reflectance for a main light emission wavelength and the light emitting device allows light to be extracted mainly at a side surface thereof.

REFERENCES:
patent: 6452216 (2002-09-01), Tsuda et al.
patent: 6844572 (2005-01-01), Sawaki et al.
patent: 2003/0178702 (2003-09-01), Sawaki et al.
patent: 2005/0269592 (2005-12-01), Lee et al.
patent: 08-274372 (1996-10-01), None
patent: 11-168235 (1999-06-01), None
patent: WO-98/18167 (1998-04-01), None

Affiliated with

Also associated with

Rating

Light emitting nitride semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting nitride semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting nitride semiconductor device and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761349