Light emitting nanowire device

Details Light emitting nanowire device Light emitting nanowire device

2011-03-15

2011-03-15

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C257S099000, C977S762000, C977S832000, C977S882000

Reexamination Certificate

active

07906354

ABSTRACT:
Method of making a light emitting semiconductor nanowire device includes providing a plurality of spaced light emitting semiconductor nanowires on a growth substrate; applying a dielectric material disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface in electrical contact with the nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded nanowires; depositing a second electrode on the bottom surface of the nanowires so that it is in electrical contact with the nanowires; and wherein either the first or second electrode is transparent to permit light to be transmitted from the light emitting semiconductor nanowires through the transparent electrode.

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