Light-emitting, nanometer scale, micromachined silicon tips

Electric lamp and discharge devices – Electrode and shield structures – Filament or resistance heated electrodes

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

313346R, 313309, 313336, 313351, 313310, H01J 130

Patent

active

059491825

ABSTRACT:
0504221609 Nanometer-scale field emitter tips are fabricated on a single crystal silicon substrate and an optically active semiconductive material is deposited on the tip. A bias voltage is connected between the semiconductor and the substrate to cause the optically active material to emit light.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 5064396 (1991-11-01), Spindt
patent: 5186670 (1993-02-01), Doan et al.
patent: 5199917 (1993-04-01), MacDonald et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5232549 (1993-08-01), Cathey et al.
patent: 5316979 (1994-05-01), MacDonald et al.
patent: 5329207 (1994-07-01), Cathey et al.
patent: 5363021 (1994-11-01), MacDonald
patent: 5438240 (1995-08-01), Cathey et al.
patent: 5448132 (1995-09-01), Komatsu
patent: 5615143 (1997-03-01), MacDonald
Zhang, et al., "Integrated Silicon Process for Microdynamic Vacuum Field Emission Cathodes", J. Vac. Sci. Technol., Nov./Dec. 1993, pp. 2538-2543.
Spallas, et al., "Self-Aligned Silicon Field Emission Cathode Arrays Formed by Selective, Lateral Thermal Oxidation of Silicon", J. Vac. Sci. Technol., Mar./Apr. 1993, pp. 437-440.
Shealy, "Characterization of AIGaAs/GaAs Heterostructures Grown In A Multichamber OMVPE Apparatus", J. of Crystal Growth 87 (1988), pp. 350-356.
Keeffe, et al., "Surface Self-Diffusion on Si from the Evolution of Periodic Atomic Step Arrays", J. Phys. Chem. Solids, vol. 55, No. 10, 1994, pp. 965-973.
Shealy, "Applied Physics Letters", Appl. Phys. Lett. 48 (14), Apr. 1986, pp. 925-927.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Light-emitting, nanometer scale, micromachined silicon tips does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting, nanometer scale, micromachined silicon tips, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting, nanometer scale, micromachined silicon tips will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1807323

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.