Light emitting material, light emitting element, light...

Details Light emitting material, light emitting element, light... Light emitting material, light emitting element, light...

2007-02-27

2009-11-24

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S079000, C257S086000, C257S102000, C257S103000, C257SE33013

Reexamination Certificate

active

07622744

ABSTRACT:
The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided in which a first electrode101, a first insulating layer102, a light emitting layer103, a second insulating layer104and a second electrode105are provided over a first electrode101, the light emitting layer103includes an inorganic compound that is any of a sulfide, a nitride and an oxide as a base material; at least one element selected from the group consisting of copper, silver, aluminum, fluorine and chlorine, as a luminescent center material; manganese; and either gallium phosphide or gallium antimonide.

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