Light emitting layers for LED devices based on high Tg...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S030000, C438S099000, C257S040000, C257S098000, C252S301340, C252S301350

Reexamination Certificate

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07115430

ABSTRACT:
A light emitting device includes: (a) a light emitting layer including an electroluminescent organic material dispersed in a matrix, wherein the matrix contains a non-electroluminescent organic polymer having a Tgof at least 170° C., and each of the organic polymer and the electroluminescent organic material constitutes at least 20 percent by weight of the light emitting layer; and (b) electrodes in electrical communication with the light emitting layer and configured to conduct an electric charge through the light emitting layer such that the light emitting layer emits light. A method for manufacturing a flexible organic light emitting device, includes providing the light emitting layer and providing electrodes above and below the light emitting layer, wherein the electrodes are in electrical communication with the light emitting layer.

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