Light emitting layer and forming method of the same

Details Light emitting layer and forming method of the same Light emitting layer and forming method of the same

2006-10-24

2006-10-24

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S014000, C257S024000, C257SE33001

Reexamination Certificate

active

07126150

ABSTRACT:
A light emitting layer including a quantum structure and the forming method of forming the same is provided. The forming method includes several steps. At first, a compound dielectric layer forms, including a dielectric layer and an impure dielectric layer, which comprises major elements and impurities. The compound dielectric layer is treated to drive the impurities to form the quantum structure in the dielectric layer according to the difference in characteristic between the major elements and impurities. For example, oxidizing the major elements to drive the impurities of the impure dielectric layer to form the quantum structure inside the dielectric layer, because the oxidizing capability of the major elements is stronger than that of the impurities. The quantum structure and compound dielectric layer construct the light emitting layer.

REFERENCES:
patent: 6424004 (2002-07-01), Kim et al.
patent: 6656792 (2003-12-01), Choi et al.

Affiliated with

Also associated with

Rating

Light emitting layer and forming method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting layer and forming method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting layer and forming method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3624399