Light emitting heterojunction semiconductor device

Details Light emitting heterojunction semiconductor device Light emitting heterojunction semiconductor device

1990-07-31

1991-04-23

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 16, 372 43, 372 44, 372 45, H01L 2714

Patent

active

050103768

ABSTRACT:
A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer (3), deposited on a substrate (1). The substrate (1) is made of GaAs, InP, GaAsP or Ge. Said active layer (3) and said clad layers (2, 4) are made of II-VI group compound semiconductor which is lattice-matched with the substrate at both room temperature and growing temperature, for instance 500.degree. C. Said II-VI group compound semiconductor has the same linear thermal expansion coefficient as that of the substrate. The linear thermal expansion coefficient of the II-IV group compound semiconductor is adjusted by additive of Cd, Mg or Hg.

REFERENCES:
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4819058 (1989-04-01), Nishizawa

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