Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-10-23
2007-10-23
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000, C257S099000, C257S079000
Reexamination Certificate
active
10986147
ABSTRACT:
A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
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Chan Chi-Feng
Hon Schang Jing
Huang Jenn-Bin
Lai Mu-Jen
Sun Hsueh-Feng
Chiu Tsz K.
Rosenberg , Klein & Lee
Supernova Optoelectronics Corporation
Wilczewski Mary
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