Light-emitting gallium nitride-based compound semiconductor devi

Details Light-emitting gallium nitride-based compound semiconductor devi Light-emitting gallium nitride-based compound semiconductor devi

1996-08-30

1999-03-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257101, 257201, 257613, H01L 3300

Patent

active

058804862

ABSTRACT:
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

REFERENCES:
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5323027 (1994-06-01), Yamada et al.
patent: 5578839 (1996-11-01), Nakamura et al.
Nakamura et al. "High-quality InGan Films Grown on GaN Films" Japanese Journal of Applied Physics, vol. 31, No. 10B, Oct. 15, 1992, Tokyo, Japan, pp. L1457-L1459.
Patent Abstracts of Japan, vol. 15 No. 470 (E-1139) Nov. 28, 1991 & JP-A-03 203 388 (Matsushita Electric Ind Co Ltd Sep. 5, 1991 (abstract).
Nakamura et al. "High-Power InGaN/GaN . . . " Applied Physics Letters, vol. 62, No. 19, May 10, 1993, New York, US, pp. 2390-2392 and p. 2390, col. 1, line 1--column 2 line 21.

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