Light-emitting gallium nitride-based compound semiconducor devic

Details Light-emitting gallium nitride-based compound semiconducor devic Light-emitting gallium nitride-based compound semiconducor devic

1996-06-10

1998-03-31

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 257615, H01L 3300

Patent

active

057341826

ABSTRACT:
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

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Nakamura et al. "High-Power InGaN/GaN . . . " Applied Physics Letters, vol. 62 No. 19, May 10, 1993, New York, US, pp. 2390-2392 and page 2390, col. 1, line 1 - col. 2 line 21.

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