Light-emitting film, light-emitting device and production...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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C257S102000, C257S079000, C257SE33013, C257SE33014

Reexamination Certificate

active

08084782

ABSTRACT:
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

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Masatoshi Shiiki et al., “Electroluminescence of Zinc Sulfide Thin Films Activated with Donors and Acceptors,” 117 Journal of Crystal Growth 1035-1039 (1992).

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